feb. 2009 1 mitsubishi igbt modules cm100du-24h high power switching use insulated type i c ................................................................... 100a v ces ....................................................... 1200v insulated type 2-elements in a pack application ups, nc machine, ac-drive control, servo, welders cm100du-24h outline drawing & circuit diagram dimensions in mm c2e1 e2 c1 g2e2 e1g1 cm g1e1 e2 g2 c2e1 c1 e2 94 16 16 2.5 21.2 7.5 2.5 25 7 17 23 24 114 418 13 48 23 4 12 13.5 80 0.25 2 6.5 mounting holes 3?5nuts 12mm deep tab #110. t=0.5 30 +1 ?.5 label circuit diagram t c measured point not recommend for new design
feb. 2009 2 mitsubishi igbt modules cm100du-24h high power switching use insulated type v v v ce = v ces , v ge = 0v v ge = v ges , v ce = 0v t j = 25 c t j = 125 c v cc = 600v, i c = 100a, v ge = 15v v cc = 600v, i c = 100a v ge = 15v r g = 3.1 ? resistive load i e = 100a, v ge = 0v i e = 100a, die / dt = ?00a / s junction to case, igbt part (per 1/2 module) junction to case, fwdi part (per 1/2 module) case to heat sink, conductive grease applied (per 1/2 module) (note 6) i c = 10ma, v ce = 10v i c = 100a, v ge = 15v (note 4) v ce = 10v v ge = 0v collector cutoff current gate-emitter threshold voltage gate-leakage current collector-emitter saturation voltage input capacitance output capacitance reverse transfer capacitance t otal gate charge t urn-on delay time turn -on rise time t urn-off delay time t urn-off fall time emitter-collector voltage reverse recovery time reverse recovery charge thermal resistance (note 5) contact thermal resistance collector-emitter voltage gate-emitter voltage maximum collector dissipation junction temperature storage temperature isolation voltage mounting torque w eight v ge = 0v v ce = 0v t c = 25 c pulse (note 1) t c = 25 c pulse (note 1) t c = 25 c charged part to base plate, f = 60hz, ac 1 minute main terminals m5 screw mounting m6 screw typ ical value collector current emitter current 1200 20 100 200 100 200 650 ?0 ~ +150 ?0 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 maximum ratings (tj = 25 c, unless otherwise specified) symbol item conditions unit ratings v v a a a a w c c v rms n m n m g v ces v ges i c i cm i e (note 2) i em (note 2) p c (note 3) t j t stg v iso min typ max 1 0.5 3.7 15 5 3 100 200 300 350 3.2 300 0.19 0.35 ma a nf nf nf nc ns ns ns ns v ns c k/w k/w k/w 2.9 2.85 375 0.55 0.07 i ces i ges c ies c oes c res q g t d (on) t r t d (off) t f v ec (note 2) t rr (note 2) q rr (note 2) r th(j-c)q r th(j-c)r r th(c-f) electrical characteristics (tj = 25 c, unless otherwise specified) symbol item test conditions v ge(th) v ce(sat) limits unit 6 4.5 note 1. pulse width and repetition rate should be such that the device junction temperature (t j ) does not exceed t jmax rating. 2. i e , v ec , t rr , q rr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode. 3. junction temperature (t j ) should not increase beyond 150 c. 4. pulse width and repetition rate should be such as to cause negligible temperature rise. 5. case temperature (t c ) measured point is shown in page outline drawing. 7.5 6. typical value is measured by using thermally conductive grease of = 0.9[w/(m ?k)]. not recommend for new design
feb. 2009 3 mitsubishi igbt modules cm100du-24h high power switching use insulated type performance curves 10 1 10 2 2 3 5 7 10 3 2 3 5 7 1.0 1.5 2.0 2.5 3.0 3.5 t j = 25c 10 8 6 4 2 0 20 0 4812 16 t j = 25c i c = 200a i c = 100a i c = 40a 10 ? 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 ? 2 10 0 357 2 10 1 357 2 10 2 357 v ge = 0v c ies c oes c res 0 50 100 150 200 048121620 v ce = 10v t j = 25c t j = 125c 5 4 3 2 1 0 200 0 50 100 150 t j = 25c t j = 125c v ge = 15v 0 50 100 150 200 0246810 v ge = 20 (v) t j = 25c 15 11 12 10 9 8 free-wheel diode forward characteristics ( typical ) emitter current i e ( a ) emitter-collector voltage v ec ( v ) capacitance characteristics ( typical ) capacitance c ies , c oes , c res ( nf ) collector-emitter voltage v ce ( v ) output characteristics ( typical ) collector current i c ( a ) transfer characteristics ( typical ) collector current i c ( a ) gate-emitter voltage v ge ( v ) collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( a ) collector-emitter saturation voltage characteristics ( typical ) collector-emitter saturation voltage characteristics ( typical ) collector-emitter voltage v ce ( v ) collector-emitter saturation voltage v ce(sat) ( v ) gate-emitter voltage v ge ( v ) not recommend for new design
feb. 2009 4 mitsubishi igbt modules cm100du-24h high power switching use insulated type 10 1 10 ? 10 ? 10 ? 10 0 7 5 3 2 10 ? 7 5 3 2 10 ? 7 5 3 2 7 5 3 2 10 ? 23 57 23 57 23 57 23 57 10 1 10 ? 10 ? 10 0 10 ? 10 ? 7 5 3 2 10 ? 7 5 3 2 10 ? 3 2 23 57 23 57 single pulse t c = 25c per unit base = r th(j c) = 0.35k/w 10 1 10 ? 10 ? 10 ? 10 0 7 5 3 2 10 ? 7 5 3 2 10 ? 7 5 3 2 7 5 3 2 10 ? 23 57 23 57 23 57 23 57 10 1 10 ? 10 ? 10 0 10 ? 10 ? 7 5 3 2 10 ? 7 5 3 2 10 ? 3 2 23 57 23 57 single pulse t c = 25c per unit base = r th(j c) = 0.19k/w 10 0 10 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 1 7 10 2 23 57 23 57 v cc = 600v v ge = 15v r g = 3.1? t j = 125c t d(off) t d(on) t f t r 10 1 7 5 3 2 10 0 10 2 7 5 3 2 10 1 357 10 2 23 57 23 10 1 10 2 2 3 5 7 10 3 2 3 5 7 ?i /dt = 200a / s t j = 25c t rr i rr 0 5 10 15 20 0 100 200 300 400 500 v cc = 400v v cc = 600v i c = 100a transient thermal impedance characteristics ( igbt part ) time ( s ) normalized transient thermal impedance z th(j ?c) half-bridge switching time characteristics ( typical ) switching times ( ns ) collector current i c ( a ) reverse recovery characteristics of free-wheel diode ( typical ) reverse recovery time t rr ( ns ) emitter current i e ( a ) reverse recovery current i rr ( a ) gate charge characteristics ( typical ) gate-emitter voltage v ge ( v ) gate charge q g ( nc ) time ( s ) transient thermal impedance characteristics ( fwdi part ) normalized transient thermal impedance z th(j ?c) not recommend for new design
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